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Low Temperature GaAs Growth on GaAs and Si with Metal-Organic Molecular Beam Epitaxy Assisted by Hydrogen Plasma
Published online by Cambridge University Press: 26 February 2011
Abstract
New low-temperature cleaning and growth processes are presented using hydrogen plasma. Cleaning of GaAs and Si surfaces are possible above 200°C and 300°C, respectively. Single-domain GaAs thin films are successfully grown on Si at 400°C using metal-organic compounds for both Ga and As. Selective growth of GaAs is demonstrated at 400°C on a Si surface partially covered withSiO2.
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- Copyright © Materials Research Society 1989