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Low Ohmic Contact Resistance of GaN by Employing XeCl Excimer Laser

Published online by Cambridge University Press:  01 February 2011

Seung-Chul Lee ,
Jin-Cherl Her ,
Sang-Myun Han ,
Kwang-Seok Seo  and
Min-Koo Han
Seung-Chul Lee
Affiliation:
School of Electrical Engineering(#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7254, Fax: +82-2-875-7254, e-mail:nakupend@emlab.snu.ac.kr
Jin-Cherl Her
Affiliation:
School of Electrical Engineering(#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7254, Fax: +82-2-875-7254, e-mail:nakupend@emlab.snu.ac.kr
Sang-Myun Han
Affiliation:
School of Electrical Engineering(#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7254, Fax: +82-2-875-7254, e-mail:nakupend@emlab.snu.ac.kr
Kwang-Seok Seo
Affiliation:
School of Electrical Engineering(#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7254, Fax: +82-2-875-7254, e-mail:nakupend@emlab.snu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Engineering(#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7254, Fax: +82-2-875-7254, e-mail:nakupend@emlab.snu.ac.kr
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Abstract

We have investigated a new method by which selective high doping concentration of GaN can be obtained using XeCl excimer laser and presented low ohmic contact resistance fabricated by the proposed method. We have irradiated silicon film deposited by sputtering on GaN using XeCl excimer laser and formed ohmic contact on the region irradiated by laser. Ohmic contact resistance by laser doping process was effectively reduced to 0.27 ohm-mm while 0.66 ohm-mm was measured in ohmic contact by conventional method. We have verified that silicon is diffused into GaN by high laser energy during laser irradiation through SIMS analysis and ohmic contact resistance is reduced due to increase of doping concentration under ohmic contact region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.52
Copyright
Copyright © Materials Research Society 2003

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