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Low Energy Ion Doping Technology for Poly-Si TFTs

Published online by Cambridge University Press:  10 February 2011

A. Mimura ,
M. Nagai  and
Y. Shinagawa
A. Mimura
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd. 7-1-1 Omika-cho, Hitachi-shi, Ibaraki-ken, 319-12 Japan, amimura@ hrl.hitachi.co.jp
M. Nagai
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd. 7-1-1 Omika-cho, Hitachi-shi, Ibaraki-ken, 319-12 Japan, amimura@ hrl.hitachi.co.jp
Y. Shinagawa
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd. 7-1-1 Omika-cho, Hitachi-shi, Ibaraki-ken, 319-12 Japan, amimura@ hrl.hitachi.co.jp
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Abstract

Ion doping technology using a bucket-type ion source to fabricate low temperature poly-Si TFTs is presented. Low energy and high ion density conditions are applied to realize the short doping time and resist mask doping for large area glass substrates. A novel CMOS doping technology with one resist mask process is proposed using compensation and inversion of the shollow doped layer. In combination with excimer laser crystallization and activation below 450°C, high performance CMOS TFTs are produced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 141
Copyright
Copyright © Materials Research Society 1997

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References

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