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Low Energy Ion Beam Modification of AlNxOy Thin Film for Insulated Gate Field Effect Transistors

Published online by Cambridge University Press:  25 February 2011

James S. Chan ,
Nathan W. Cheung  and
Kin Man Yu
James S. Chan
Affiliation:
Department of Electrical Engineering and Computer SciencesUniversity of California, Berkeley, CA 94720
Nathan W. Cheung
Affiliation:
Department of Electrical Engineering and Computer SciencesUniversity of California, Berkeley, CA 94720
Kin Man Yu
Affiliation:
Lawrence Berkeley LaboratoryUniversity of California, Berkeley, CA 94720
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Abstract

Nitrogen ion implantation was performed to enhance the nitrogen content of non-stoichiometric AlNXOY film (x < 1.0), which was prepared via reactive RF sputtering. A method called plasma immersion ion implantation (P111) was employed to perform the nitrogen implants. The implanted films were studied for changes in film composition using Rutherford Backscattering (RBS). Optical absorption behavior of the films was analyzed using a Perkin-Elmer monochrometer, and electrical characteristics were measured using both high frequency capacitance-volltage (CV) and current-voltage (IV) measurements. The implanted films were subsequently rapid thermal annealed in a nitrogen atmosphere from 550°C to 1060°C, and the resulting effects on the AlNXOY film were investigated using the aforementioned techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 377
Copyright
Copyright © Materials Research Society 1992

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References

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