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Localized Gallium Doping and Cryogenic Deep Reactive Ion etching in Fabrication of Silicon Nanostructures

Published online by Cambridge University Press:  31 January 2011

Nikolai Chekurov
Affiliation:
nikolai.chekurov@tkk.fi, Helsinki University of technology, Micro and Nanosciences, Espoo, Finland
Kestutis Grigoras
Affiliation:
kestas.grigoras@tkk.fi, Helsinki University of technology, Micro and Nanosciences, Espoo, Finland
Antti Peltonen
Affiliation:
antti.peltonen@tkk.fi, Helsinki University of Technology, TKK Micronova, Espoo, Finland
Sami Franssila
Affiliation:
sami.franssila@tkk.fi, Helsinki University of technology, Micro and Nanosciences, Espoo, Finland
Ilkka Tittonen
Affiliation:
ilkka.tittonen@tkk.fi, Helsinki University of technology, Micro and Nanosciences, Espoo, Finland
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Abstract

We present a novel fabrication method to create controlled 3-dimensional silicon nanostructures with the lateral dimensions that are less than 50 nm as a result of a rapid clean room compatible process. We also demonstrate periodic and nonperiodic lattices of nanopillars in predetermined positions with the minimum pitch of 100 nm. One of the uses of this process is to fabricate suspended silicon nanowhiskers.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

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