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Local Interface Composition and Band Offset Tuning in ZnSe-GaAs(001) Heterostructures

Published online by Cambridge University Press:  21 February 2011

R. Nicolini ,
L. Vanzetti ,
Guido Mula ,
G. Bratina ,
L. Sorba ,
A. Mura ,
J.E. Angelo ,
W.W. Gerberich  and
A. Franciosi
R. Nicolini
Affiliation:
Laboratorio Tecnologie Avanzate Superfici e Catalisi del Consorzio Interuniversitario di Fisica della Materia, Area di Ricerca, Padriciano 99,1-34012 Trieste, Italy.
L. Vanzetti
Affiliation:
Laboratorio Tecnologie Avanzate Superfici e Catalisi del Consorzio Interuniversitario di Fisica della Materia, Area di Ricerca, Padriciano 99,1-34012 Trieste, Italy.
Guido Mula
Affiliation:
Laboratorio Tecnologie Avanzate Superfici e Catalisi del Consorzio Interuniversitario di Fisica della Materia, Area di Ricerca, Padriciano 99,1-34012 Trieste, Italy. Dipartimento di Science Fisiche dell'Universita' di Cagliari, Via Ospedale 72,1-09124 Cagliari, Italy.
G. Bratina
Affiliation:
Laboratorio Tecnologie Avanzate Superfici e Catalisi del Consorzio Interuniversitario di Fisica della Materia, Area di Ricerca, Padriciano 99,1-34012 Trieste, Italy. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
L. Sorba
Affiliation:
Laboratorio Tecnologie Avanzate Superfici e Catalisi del Consorzio Interuniversitario di Fisica della Materia, Area di Ricerca, Padriciano 99,1-34012 Trieste, Italy.
A. Mura
Affiliation:
Dipartimento di Science Fisiche dell'Universita' di Cagliari, Via Ospedale 72,1-09124 Cagliari, Italy.
J.E. Angelo
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
W.W. Gerberich
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
A. Franciosi
Affiliation:
Laboratorio Tecnologie Avanzate Superfici e Catalisi del Consorzio Interuniversitario di Fisica della Materia, Area di Ricerca, Padriciano 99,1-34012 Trieste, Italy. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
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Abstract

ZnSe-GaAs(001) heterostructures have been grown by molecular beam epitaxy and characterized in situ by means of reflection high energy electron diffraction and x-ray photoemission spectroscopy, and ex-situ by near edge photoluminescence spectroscopy and by cross sectional transmission electron microscopy. By changing the Zn/Se flux intensity ratio (we explored the 0.1-10 range) we were able to control the Zn/Se relative concentration in the interface region, while maintaining a similar structure and high degree of long range order at the interface. Correspondingly, the valence band discontinuity is found to vary from 0.6eV (Se-rich interface) to 1.2eV (Zn-rich interface) in the interface composition range examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 3
Copyright
Copyright © Materials Research Society 1994

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