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Local Electronic Structure and UV Electroluminescence of n-ZnO:N/p-GaN Heterojunction LEDs Grown by Remote Plasma Atomic Layer Deposition

Published online by Cambridge University Press:  25 May 2012

Jui F. Chien ,
Ching H. Chen ,
Jing J. Shyue  and
Miin J. Chen
Jui F. Chien
Affiliation:
Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, Republic of China.
Ching H. Chen
Affiliation:
Protrustech Corporation Limited, Tainan, Taiwan, Republic of China.
Jing J. Shyue
Affiliation:
Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, Republic of China. Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan, Republic of China.
Miin J. Chen*
Affiliation:
Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, Republic of China. Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei, Taiwan, Republic of China.
*
#x002A;E-mail: mjchen@ntu.edu.tw
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Abstract

Nitrogen-doped ZnO (ZnO:N) films have been prepared by remote plasma atomic layer deposition (RP-ALD) and treated by rapid thermal annealing (RTA) in oxygen atmosphere. The local electronic structures of the (ZnO:N) films were investigated by X-ray photoelectron spectroscopy (XPS) and X-ray absorption near edge spectroscopy (XANES) at the O K-edge. The XPS reveals the presence of the Zn-N bond in the ZnO:N films, indicating that partial amounts of oxygen sites are occupied by nitrogen species. This is correspondent with the decrease of electron concentration in ZnO:N films with the nitrogen doping concentration, as indicated by the Hall effect measurement. The RP-ALD technique was applied to fabricate the n-type ZnO:N/p-type GaN heterojunction LEDs. Dominant ultraviolet electroluminescence at 371 nm from the ZnO:N layer was observed at room temperature.

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Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g02-02
Copyright
Copyright © Materials Research Society 2012

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