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Local Bonding in A—Sige Alloy Films

Published online by Cambridge University Press:  28 February 2011

G. Lucovsky ,
R.A. Rudder ,
J.W. Cook Jr  and
S.Y. Lin
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University Raleigh, North Carolina 27695–8202
R.A. Rudder
Affiliation:
Department of Physics, North Carolina State University Raleigh, North Carolina 27695–8202
J.W. Cook Jr
Affiliation:
Department of Physics, North Carolina State University Raleigh, North Carolina 27695–8202
S.Y. Lin
Affiliation:
Department of Physics, North Carolina State University Raleigh, North Carolina 27695–8202
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Abstract

This paper discusses the bonding of hydrogen in a—Si,Ge:H alloy films prepared byreactive magnetron sputtering (RMS). We compare our results for H atom bonding with films produced by: (a) the glow discharge decomposition (GDD) of silane and germane mixtures, and (b) reactive diode sputtering (RDS). We discuss the energy states associated with Si and Ge atom nfeutrat angling bonds in the context of an empirical tight—binding modeL The model places the Ge atom dangling bond state deeper in the gap than the corresponding Si atom defect state. The differences between the electronic properties of GDDand RDS films, and R4S films are explained in terms of the degree of H compensation of Si and Ge atom dangling bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 135
Copyright
Copyright © Materials Research Society 1985

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