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Light-Induced Degradation and Annealing Behaviour of Amorphous Silicon: A Comparison of Films and Devices
Published online by Cambridge University Press: 26 February 2011
Abstract
The kinetics of the Staebler-Wronski effect in a-Si:H p-i-n solar cells are well known [1]. We report measurements of the kinetics of light-induced degradation and annealing of a-Si films in which we have monitored the changes in subgap absorption by means of photothermal deflection spectroscopy (PDS). The kinetics of films and cells are found to be very similar, suggesting that cell degradation is largely a material, as opposed to a device effect.
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- Copyright © Materials Research Society 1987
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