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Leakage Current of PLD- and CSD-BiFeO3 Thin Films Observed by Current Sensitive AFM

Published online by Cambridge University Press:  31 January 2011

Seiji Nakashima ,
Hironori Fujisawa ,
Jung Min Park ,
Takeshi Kanashima ,
Masanori Okuyama  and
Masaru Shimizu
Seiji Nakashima
Affiliation:
nakashima@eng.u-hyogo.ac.jp, University of Hyogo, Dept. of Electrical Engineering and Computer Sciences, Himeji, Japan
Hironori Fujisawa
Affiliation:
fujisawa@eng.u-hyogo.ac.jp, University of Hyogo, Dept. of Electrical Engineering and Computer Sciences, Himeji, Japan
Jung Min Park
Affiliation:
kanashima@ee.es.osaka-u.ac.jp, Osaka University, Dept. of Systems Innovation, Toyonaka, Japan
Takeshi Kanashima
Affiliation:
kanashima@ee.es.osaka-u.ac.jp, Osaka University, Dept. of Systems Innovation, Toyonaka, Japan
Masanori Okuyama
Affiliation:
okuyama@ee.es.osaka-u.ac.jp, Osaka University, Dept. of Systems Innovation, Toyonaka, Japan
Masaru Shimizu
Affiliation:
mshimizu@eng.u-hyogo.ac.jp, University of Hyogo, Dept. of Electrical Engineering and Computer Sciences, Himeji, Japan
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Abstract

We have investigated relationships between leakage current and microstructure or domain structure of BiFeO3 (BFO) thin films, and leakage current mappings of BFO thin films have been performed by current sensitive AFM. 350-nm-thick and 250-nm-thick BFO thin films were prepared on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition (PLD) and chemical solution deposition (CSD), respectively. Average grain size of PLD-BFO thin film is about 480 nm, which is the same as the film thickness. From the leakage current mapping at a bias voltage of -16 Vdc, leakage current of the BFO thin film flows through not only grain boundary but also the grain itself. On the other hand, CSD-BFO thin film shows rosette structure and small size grains. From the leakage current mapping at a bias voltage of -10 Vdc, leakage current flows along boundaries of the rosette structures. These results indicate that leakage current of BFO strongly depends on its microstructure.

Keywords

ferroelectricityscanning probe microscopy (SPM)electrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1199: Symposium F –Multiferroic and Ferroelectric Materials , 2009 , 1199-F06-21
Copyright
Copyright © Materials Research Society 2010

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References

1 Dawber, M., Rabe, K. M., and Scott, J. F., Rev. Mid. Phys. 77, 1083, (2005).Google Scholar
2 Cohen, R. E., >Nature (London) 358, 136, (1992).Nature+(London)+358,+136,+(1992).>Google Scholar
3 Ren, X., Nat. Mater. 3, 91, (2004).Google Scholar
4 Wang, J., Neaton, J. B., Zheng, H., Nagarajan, V., Ogale, S. B., Liu, B., Viehland, D., Vaithyanathan, V., Schlom, D. G., Waghmare, U. V., Spaldin, N. A., Rabe, K. M., Wuttig, M., and Ramesh, R., Science 299, 1719, (2003).Google Scholar
5 Lebeugle, D., Colson, D., Forget, A., Viret, M., Bonville, P., Marucco, J. F., and Fusil, S., Phys. Rev. B 76, 024116, (2007).Google Scholar
6 Lebeugle, D., Colson, D., Forget, A., and Viret, M., Appl. Phys. Lett. 91, 022907, (2007).Google Scholar
7 Yun, K. Y., Ricinschi, D., Kanashima, T., Noda, M., and Okuyama, M., Appl. Phys. Lett. 89, 192902, (2006).Google Scholar
8 Naganuma, H., Miura, J., Okamura, S., Appl. Phys. Lett., 93, 052901 (2008).Google Scholar
9 Singh, S. K., Ishiwara, H., Sato, K. and Maruyama, K., J. Appl. Phys. 102, 094109, (2007).Google Scholar
10 Kawae, T., Tsuda, H., Naganuma, H., Yamada, S., Kumeda, M., Okamura, S., and Morimoto, A., Jpn. J. Appl. Phys. 47, 7586, (2008).Google Scholar
11 Fujisawa, H., Shimizu, M., Shiosaki, T., and Matsushige, K., Appl. Phys. Lett., 71, 416 (1997).Google Scholar
12 Gruverman, A., Isobe, C., and Tanaka, M., Mat. Res. Soc. Symp. Proc., 655, CC8.5 (2001).Google Scholar
13 Nakamura, Y., Nakashima, S., Ricinschi, D., and Okuyama, M., Functional Materials Letters, 1, 18 (2008).Google Scholar