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Lead Zirconate-Titanate Thin Films Prepared by the Laser Ablation Technique

Published online by Cambridge University Press:  16 February 2011

C. K. Chiang
Affiliation:
National Institute of Standards and Technology Gaithersburg, MD 20899
L. P. Cook
Affiliation:
National Institute of Standards and Technology Gaithersburg, MD 20899
P. K. Schenck
Affiliation:
National Institute of Standards and Technology Gaithersburg, MD 20899
P. S. Brody
Affiliation:
Harry Diamond Laboratories, Adelphi, MD 20783
J. M. Benedetto
Affiliation:
Harry Diamond Laboratories, Adelphi, MD 20783
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Abstract

Lead zirconate-titanate (PZT) thin films were prepared by the laser ablation technique. The PZT (Zr/Ti=53/47) target was irradiated using a focused q-switched Nd:YAG laser (15 ns, 100 mJ at 1.064 μ;m). The as-deposited films were amorphous as indicated by X-ray powder patterns, but crystallized readily with brief annealing above 650°C. The dielectric constant and the resistivity of the crystallized films were studied using a parallel-plate type capacitor structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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