Published online by Cambridge University Press: 25 February 2011
Thin films of antiferroelectric tetragonal (Pb.97 La.02 )(Zr1-x-yTixSny)O3 have been synthesized from acetate and alkoxide precursors via a sol-gel process. A multiple layer spin coating procedure was used to prepare 0.4 gtm films on platinized silicon wafers. Crystallization of the films as confirmed by x-ray diffraction was achieved by rapid thermal annealing at 700°C for 20 seconds. Antiferroelectric to ferroelectric phase switching threshold fields were determined from P-E hysteresis curves. Longitudinal strain is reported as a function of applied electric field, with a maximum strain of 1.6×10-3 measured at an applied dc bias field of 120 kV/cm on a film of composition Pb.97 La.02 (Zr.60Ti.l0Sn.30 )O3. These films show promise for micromechanical actuator applications due to the high strain associated with field forced antiferroelectric to ferroelectric phase switching.