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Layered Structures Composed of Si, Ge, GaAs, and Fluorides

Published online by Cambridge University Press:  26 February 2011

H. Ishiwara ,
T. Asano ,
K. Tsutsui ,
H. C. Lee  and
S. Furukawa
H. Ishiwara
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227, JAPAN
T. Asano
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227, JAPAN
K. Tsutsui
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227, JAPAN
H. C. Lee
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227, JAPAN
S. Furukawa
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227, JAPAN
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Abstract

Recent progress in the heteroepitaxial growth of layered structures of Si, Ge, GaAs, and alkaline earth fluorides is reviewed. Effectiveness of the predeposition technique, in which a thin Si layer is deposited on the CaF2 surface at room temperature prior to the growth of a thick Si film at 800°C, is shown for the growth of Si films on CaF2/Si structures. In case of the overgrowth of Ge and GaAs films on (111) substrates, modification of the fluoride surface by electron beam exposure is effective to increase the wettability between fluoride and semiconductor films and to improve the crystallinity and surface morphology of the films. Finally, antiphase disorder in the GaAs(l00) films grown on fluorides is experimentally studied and the generation mechanisms are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 343
Copyright
Copyright © Materials Research Society 1988

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References

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