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Lattice-Symmetry-Driven Phase Competition in Vanadium Dioxide

Published online by Cambridge University Press:  04 April 2011

A. Tselev ,
I. A. Luk’yanchuk ,
I. N. Ivanov ,
J. D. Budai ,
J. Z. Tischler ,
E. Strelcov ,
A. Kolmakov  and
S. V. Kalinin
A. Tselev*
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
I. A. Luk’yanchuk
Affiliation:
Laboratory of Condensed Matter Physics, University of Picardie Jules Verne, Amiens, 80039, France
I. N. Ivanov
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. D. Budai
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. Z. Tischler
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
E. Strelcov
Affiliation:
Physics Department, Southern Illinois University Carbondale, Carbondale, IL 62901
A. Kolmakov
Affiliation:
Physics Department, Southern Illinois University Carbondale, Carbondale, IL 62901
S. V. Kalinin
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
*
*Corresponding author, e-mail: tseleva@ornl.gov
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Abstract

We performed group-theoretical analysis of the symmetry relationships between lattice structures of R, M1, M2, and T phases of vanadium dioxide in the frameworks of the general Ginzburg-Landau phase transition theory. The analysis leads to a conclusion that the competition between the lower-symmetry phases M1, M2, and T in the metal-insulator transition is pure symmetry driven, since all the three phases correspond to different directions of the same multi-component structural order parameter. Therefore, the lower-symmetry phases can be stabilized in respect to each other by small perturbations such as doping or stress.

Keywords

oxideVmetal-insulator transition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1292: Symposium K – Oxide Nanoelectronics , 2011 , mrsf10-1292-k02-09
Copyright
Copyright © Materials Research Society 2011

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References

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