Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-23T08:59:49.971Z Has data issue: false hasContentIssue false
  • English
  • Français

Lateral Grain Growth in the Excimer Laser Crystallization of Poly-Si

Published online by Cambridge University Press:  15 February 2011

H. Kuriyama ,
K. Sano ,
S. Ishida ,
T. Nohda ,
Y. Aya ,
T. Kuwahara ,
S. Noguchi ,
S. Kiyama ,
S. Tsuda  and
S. Nakano
H. Kuriyama
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573 Giant Electronics Technology Co., Ltd., 1-6-5 Higashinihonbashi, Chuo-ku, Tokyo 103
K. Sano
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
S. Ishida
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
T. Nohda
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
Y. Aya
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
T. Kuwahara
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
S. Noguchi
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
S. Kiyama
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573 Giant Electronics Technology Co., Ltd., 1-6-5 Higashinihonbashi, Chuo-ku, Tokyo 103
S. Tsuda
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
S. Nakano
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
Get access

Abstract

We have succeeded in obtaining nondoped, thin poly-Si film (thickness ∼500Å) with excellent crystallinity and large grain size (Maximum grain size ∼4.5 μ m) by an excimer laser annealing Method, which offers the features of low-temperature processing and a short processing time. The grain size distribution shrinks in the region around 1.5 μ m and this poly-Si film exhibits a strong (111) crystallographic orientation. Poly-Si thin film transistors using these films show quite a high field effect mobility of 440cm2/V · s below 600°C process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 657
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Sameshima, T., Hara, M. and Usui, S., Jpn. J. Appl. Phys. 28, 1789 (1989).Google Scholar
[2] Kuriyama, H., Kiyama, S., Noguchi, S., Kuwahara, T., Ishida, S., Nohda, T., Sano, K., Iwata, H., Kawata, H., Osumi, M., Tsuda, S., Nakano, S. and Kuwano, Y., Jpn. J. Appl. Phys. 30, 3700 (1991).Google Scholar
[3] Kuriyama, H., Kiyama, S., Noguchi, S., Kuwahara, T., Ishida, S., Nohda, T., Sano, K., Iwata, H., Tsuda, S. and Nakano, S., Int. Electron Devices Meet. Tech. Dig. p. 563 (1991).Google Scholar
[4] Emoto, F., Senda, K., Fujii, E., Nakamura, A., Yamamoto, A., Uemoto, Y. and Kano, G., IEEE Trans. Electron Devices ED–37. 1462 (1989).Google Scholar
[5] Katoh, T., IEEE Trans. Electron Devices ED–35. 923 (1988).Google Scholar
[6] Kumomi, H. and Yonehara, T., Appl. Phys. Lett. 44, 3565 (1991).Google Scholar
[7] Thompson, C. V. and Smith, H. I., Appl. Phys. Lett. 44, 603 (1984).Google Scholar
[8] Thompson, C. V., J. Appl. Phys. 58, 763 (1985).Google Scholar