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Laser-Induced Crystallization of SiGe MEMS Structural Layers Deposited at Temperatures Below 250°C

Published online by Cambridge University Press:  31 January 2011

Joumana El-Rifai ,
Sherif Sedky ,
Rami Wasfi ,
Chris Van Hoof  and
Ann Witvrouw
Joumana El-Rifai
Affiliation:
joerifai@aucegypt.edu, Youssef Jameel Science and Technology Research Center, The American University in Cairo, Cairo, Egypt
Sherif Sedky
Affiliation:
sedky@aucegypt.edu, The American University in Cairo, Physics Department, Cairo, Egypt
Rami Wasfi
Affiliation:
ramiwasfi@gmail.com, Youssef Jameel Science and Technology Research Center, The American University in Cairo, Cairo, Egypt
Chris Van Hoof
Affiliation:
vanhoofc@imec.be, IMEC, Leuven, Belgium
Ann Witvrouw
Affiliation:
witvrouw@imec.be, IMEC, Leuven, Belgium
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Abstract

This work is a step towards a viable process for poly-SiGe MEMS structural layers deposited at substrate temperatures below 250°C. Laser annealing was used for post-deposition layer treatment to realize poly-SiGe structural layers with the desired electrical and mechanical properties at low substrate temperatures. The technique uses a pulsed excimer laser beam for the local thermal treatment of a SiGe layer deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) at 210°C. By tuning the laser treatment and the film deposition conditions, 1-1.8 μm thick films having an electrical resistivity as low as 14.1 mΩ∙cm and optimal strain gradient in the range of -4.3×10-6 to +6.8×10-6 μm-1 were realized.

Keywords

laser annealingmicroelectro-mechanical (MEMS)polycrystal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A19-03
Copyright
Copyright © Materials Research Society 2009

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