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Laser-Assisted Local Etching of Gallium Arsenide

Published online by Cambridge University Press:  21 February 2011

M. Takai ,
J. Tokuda ,
H. Nakai ,
K. Gamo  and
S. Namba
M. Takai
Affiliation:
Faculty Of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
J. Tokuda
Affiliation:
Faculty Of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
H. Nakai
Affiliation:
Faculty Of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
K. Gamo
Affiliation:
Faculty Of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
S. Namba
Affiliation:
Faculty Of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
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Abstract

Pyrolytic local etching of GaAs using focused Ar laser beams in C12 or CCl4 gas atmospheres has been performed to investigate the possibility of maskless etching processes by laser beams. Etching rates from 0.3 to 40 μ/scan with an etched linewidth down to 5 μ were obtained. In the case of CC1 4 , a carbon line buried in GaAs was obtained for a single scan of a laser beam at a pressure above 80 Torr with low scanning speeds or at a pressure above 120 Torr.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 211
Copyright
Copyright © Materials Research Society 1984

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References

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