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Laser Interference Structuring of a-GeN for the Production of Optical Diffraction Gratings

Published online by Cambridge University Press:  01 February 2011

M. Mulato ,
A. R. Zanatta ,
D. Toet  and
I. E. Chambouleyron
M. Mulato
Affiliation:
Departamento de Física e Matemática, Faculdade de Filosofia Ciências e Letras de Ribeirāo Preto, Universidade de Sāo Paulo, Av. Bandeirantes 3900, Ribeirāo Preto, SP, Brazil
A. R. Zanatta
Affiliation:
Instituto de Física de Sāo Carlos, Universidade de Sāo Paulo, Sāo Carlos, SP, Brazil
D. Toet
Affiliation:
FlexICs Inc.,165 Topaz Street, Milpitas, CA, 95035, USA
I. E. Chambouleyron
Affiliation:
Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas - Unicamp, Campinas, SP, Brazil
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Abstract

In this work, we study the pulsed laser crystallization of hydrogen-free amorphous germanium-nitrogen alloys (a-GeN). We discuss the role of nitrogen during phase transitions and the possible application of the resulting structure as an optical diffraction grating. The crystallized region results of pure microcrystalline germanium (μc-Ge). An indication that Ge-N bonds have broken and nitrogen outdiffused of the film is obtained from infrared spectroscopy and confirmed by Raman spectra. A pattern of alternating a-GeN and μc-Ge lines with a period of about 4 μm acts as an optical diffraction grating due to the difference in optical properties between the two materials, and the three dimensional surface profile, caused by N2 effusion, that is formed on the sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A17.4
Copyright
Copyright © Materials Research Society 2003

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