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Laser CVD of A-Si:H: Film Properties and Mechanism
Published online by Cambridge University Press: 25 February 2011
Abstract
Films of a- Si: Hwere deposited from Sill4 in a parallel configuration employing acw CO2 laser. Infrared spectra, photoconductivities and dark conductivities of the films were studied as a function of surface temperature between 250°C and400° C. The results are compared with data obtained from deposition experiments using Si2H6 and an ArF laser. Implications for the mechanism of LICVD are discussed.
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- Copyright © Materials Research Society 1989
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