Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-06-23T13:34:55.623Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Assisted Chemical Vapor Deposition of Cu from a New Cu Organometallic Complex

Published online by Cambridge University Press:  25 February 2011

Jaesung Han ,
Klavs F. Jensen  and
John A.T. Norman
Jaesung Han
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Klavs F. Jensen
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
John A.T. Norman
Affiliation:
Schumacher Company, Carlsbad, CA 92009
Get access

Abstract

We describe pyrolytic laser assisted chemical vapor deposition (LCVD) of copper onto silicon using a copper(I) hexafluoroacetylacetonate trimethylvinylsilane organometallic complex with 514.5 nm radiation from an Ar+ laser. Growth rates of 0.4-40 μm/min were obtained and at intermediate laser powers, the Cu lines had a resistivity comparable to that of bulk Cu. The line shape and morphology was strongly dependent upon laser power with volcano shapes appearing at higher powers. The growth was sensitive to the nature of the substrate suggesting that film nucleation was a critical element in the writing process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 97
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ehrlich, D.J. and Tsao, J.Y.(eds.), Laser Microfabrication-Thin Lithography, Academic Press (1989)Google Scholar
2. Ibbs, K.G. and Osgood, R.M.(eds.), Laser Chemical Processing for Microelectronics, Cambridge University Press (1989)Google Scholar
3. Houle, F.A., Jones, C.R., Baum, T., Pico, C., and Kovac, C.A., Appl. Phys. Lett. 46, 204 (1985)CrossRefGoogle Scholar
4. Moylan, C.R., Baum, T.H., and Jones, C.R., Appl. Phys. A 40, 1 (1986)Google Scholar
5. Marinero, E.E. and Jones, C.R., J. Chem. Phys. 82, 1608 (1985)Google Scholar
6. Wilson, R.J., Houle, F.A., Phys. Rev. Lett. 47, 538 (1985)Google Scholar
7. Markwalder, B., Widmer, M., Braichotte, D., and Berge, H.J. van den, J Appl. Phys. 65, 2470 (1988)Google Scholar
8. Norman, J.A.T., Muratore, B.A., Dyer, P.N., Roberts, D.A., and Hochberg, A.K., J. de Physique IV, C2–227 (1991)Google Scholar
9. Shin, H.K., Chi, K.M., Hampden-Smith, M.J., Kodar, T.T., Farr, J.D. and Paffett, M., Adv. Matter (FRG) 3, 248 (1991)Google Scholar
10. Moody, J.E. and Hendel, R.H., J. Appl. Phys. 53, 4364 (1982)Google Scholar
11. Lax, M., Appl. Phys. Lett. 33, 786 (1978)CrossRefGoogle Scholar
12. Bhattacharya, P.K., Gupta, S.K., and Wagh, A.G., Radiation Effects, 13, 197 (1982)Google Scholar