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Laser Ablation Process and Growth Control of Oxide Thin Films in Laser Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

T. Kawai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567 Japan
H. Nismkawa
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567 Japan
K. Koguchi
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567 Japan
M. Kanai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567 Japan
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Abstract

In order to study mechanism of laser ablation, the time-of-flight spectra of monovalent ions generated by ablation of alkaline earth metals are measured. The obtained spectra show that the ion generation is caused by 5-, 4- and 3-photon processes for Ca, Sr and Ba, respectively, when ArF excimer laser is used as a light source. This behavior suggests that laser ablation of alkaline earth metals is triggered by excitation of electrons at the highest inner-core level. Control of layer-by-layer growth processes by monitoring emission from the ablation plume is also reported. The emission measurement is utilized for estimation of each layer thickness in layer-by-layer growth. This conventional technique is very effective for automatic control of layer-by-layer growth.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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