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Large Scale and Large Area Amorphous Silicon Thin Film Transistor Arrays for Active Matrix Liquid Crystal Displays

Published online by Cambridge University Press:  26 February 2011

H. Miki ,
S. Kawamoto ,
T. Horikawa ,
T. Maejima ,
H. Sakamoto ,
M. Hayama  and
Y. Onishi
H. Miki
Affiliation:
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corp. 1–1, Tsukaguchi-Honmachi 8-chome, Amagasaki, 661, Japan
S. Kawamoto
Affiliation:
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corp. 1–1, Tsukaguchi-Honmachi 8-chome, Amagasaki, 661, Japan
T. Horikawa
Affiliation:
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corp. 1–1, Tsukaguchi-Honmachi 8-chome, Amagasaki, 661, Japan
T. Maejima
Affiliation:
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corp. 1–1, Tsukaguchi-Honmachi 8-chome, Amagasaki, 661, Japan
H. Sakamoto
Affiliation:
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corp. 1–1, Tsukaguchi-Honmachi 8-chome, Amagasaki, 661, Japan
M. Hayama
Affiliation:
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corp. 1–1, Tsukaguchi-Honmachi 8-chome, Amagasaki, 661, Japan
Y. Onishi
Affiliation:
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corp. 1–1, Tsukaguchi-Honmachi 8-chome, Amagasaki, 661, Japan
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Abstract

The preparation and properties of hydrogenated amorphous silicon thin film transistor arrays for active matrix liquid crystal displays are reported. The effect of amorphous silicon film preparation conditions on the field effect mobility of thin film transistors was investigated. The dry etching rate of silicon nitride film was studied.The thin film transistor arrays have 408 ˜ 640 transistors on the first version and 450 ˜ 640 ˜ 3 transistors on the second version. The liquid crystal panel fabricated using the first version arrays showed good characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 431
Copyright
Copyright © Materials Research Society 1987

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References

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