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Large Lattice Mismatch Epitaxy

Published online by Cambridge University Press:  10 February 2011

S. Mahajan*
Affiliation:
Department of Materials Science and Engineering Carnegie Mellon University, Pittsburgh, PA 15213
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Abstract

During the early stages of lattice mismatch epitaxy, island growth is observed in several systems. The evolution of this morphology is attributed to a large value of the substrate/layer interface energy. Origins of misfit and threading dislocations are also considered. Nucleation of misfit dislocations could occur either from steps present on surfaces of islands or from substrate/island edges. Arms of glide loops terminating at the surface in the first case form threading segments in the layer, whereas the coalescence of islands in which misfit dislocations are not aligned with respect to each other lead to threading dislocations in the second case. Existing approaches for lowering threading dislocation densities are also evaluated. A novel approach involving controlled, self-assembly of islands is presented to achieve the preceding objective.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

Beam, E.A. III, Mahajan, S. and Bonner, W. A., Mats. Sci. & Eng. (B) 7, 83 (1990).Google Scholar
Eaglesham, D.J. Hull, R., Mats. Sci. & Eng. (B) 30, 197 (1995).Google Scholar
Kang, J.M., Nouaoura, M., Lassabatere, L, and Rocher, A., J. Cryst. Growth 143, 115 (1994).Google Scholar
LeGoues, F.K., Powell, A. and Iyer, S.S., J. Appl. Phys. 75, 7240 (1994).Google Scholar
LeGoues, F.K., Tersoff, J., Reuter, M.C., Hammar, M. and Tromp, R., Appl. Phys. Lett. 67, 2317 (1995).Google Scholar
Lester, S.D., Ponce, F.A., Craford, M. G. and Steigerwald, D.A., Appl. Phys. Lett. 66, 1249 (1995).Google Scholar
Mahajan, S., Prog. Mats. Sci. 33, 1 (1989).Google Scholar
Matthews, J.W., Phil. Mag. 13, 1207 (1966).Google Scholar
Narayan, J.and Sharan, S., Mats. Sci. & Eng. (B) 10, 261 (1991).Google Scholar
Oktyabrsky, S., Wu, H., Vispute, R.D. and Narayan, J., Phil. Mag. A 71, 537 (1995).Google Scholar
Pashley, M.D. and Li, D., Mats. Sci. & Eng. (B) 30, 73 (1995).Google Scholar
Ponce, F.A., Krusor, B.S., Major, J.S. Jr.,, Piano, W.E. and Welch, D.F., Appl. Phys. Lett. 67, 410 (1995).Google Scholar
Powell, A., LeGoues, F.K. and Iyer, S.S., Appl. Phys. Lett. 64, 1856 (1994).Google Scholar
Rocher, A. and Kang, J.M., work presented at the International Conference on Microscopy of Semiconducting Materials, Oxford (1995).Google Scholar
Vardya, R. and Mahajan, S., Phil. Mag. A 71, 465 (1995).Google Scholar
Weeks, T.W. Jr.,, Bremser, M.D., Ailey, K.S., Carlson, E., Perry, W.G. and Davis, R.F., Appl. Phys. Lett. 67, 401 (1995).Google Scholar
Xie, J.H., Fitzgerald, E.A., Silverman, P.J., Kortan, A.R., and Wei, B.E., Mats. Sci. & Eng. (B) 14, 332 (1992).Google Scholar