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Kinetics of NiSi Formation by Solid State Diffusion in Pt/NiCr/Si Via Growth of an Amorphous Cr-Rich Barrier Layer

Published online by Cambridge University Press:  26 February 2011

B.K. Patnaik ,
Ju Hyeon Lee ,
D. Adams ,
G.A. Rozgonyi ,
N.R. Parikh ,
M.L. Swanson ,
A.S.M. Salih  and
P. Balducci
B.K. Patnaik
Affiliation:
Dept. of Physics & Astronomy, University of North Carolina, Chapel Hill, N.C. 27599 Dept. of Materials Science & Engineering, N. C. State University, Raleigh, N.C. 27695
Ju Hyeon Lee
Affiliation:
Dept. of Materials Science & Engineering, N. C. State University, Raleigh, N.C. 27695
D. Adams
Affiliation:
Dept. of Materials Science & Engineering, N. C. State University, Raleigh, N.C. 27695
G.A. Rozgonyi
Affiliation:
Dept. of Materials Science & Engineering, N. C. State University, Raleigh, N.C. 27695
N.R. Parikh
Affiliation:
Dept. of Physics & Astronomy, University of North Carolina, Chapel Hill, N.C. 27599
M.L. Swanson
Affiliation:
Dept. of Physics & Astronomy, University of North Carolina, Chapel Hill, N.C. 27599
A.S.M. Salih
Affiliation:
General Instruments Corporation, Westbury, N.Y. 11590
P. Balducci
Affiliation:
General Instruments Corporation, Westbury, N.Y. 11590
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Abstract

We have used Rutherford backscattering spectroscopy (RBS) to study the kinetics of NiSi growth during low temperature annealing of a Ni(Cr) layer on Si. During the silicide growth, a Cr-rich amorphous layer was formed between the silicide and the Ni(Cr) layers. This amorphous layer produces a slow and uniform silicide growth rate; the NiSi thickness was 60 nm after a 2h anneal at 475°C. After prolonged annealing, the amorphous layer recrystallized, causing very rapid silicide growth. When a thin (0.5 nm) layer of Pt was deposited between the Si and Ni(Cr) layers, the amorphous layer was thinner, the silicide growth rate was correspondingly greater and the rapid growth stage occurred earlier. The RBS data agreed qualitatively with transmission electron microscopy results for the growth of both the amorphous layer and the silicide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 275
Copyright
Copyright © Materials Research Society 1992

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References

1. Reus, R.de, Tissik, H.C., Saris, F.W., J.Mater.Res., 51(3) 1663 (1989)Google Scholar
2. Rozgonyi, G.A., Lee, J.H., Knoesen, D., Adams, D., Patnaik, B., Parikh, N., Salih, A.S.M., Balducci, P., Appl.Phys.Lett. 58, Feb. 18 (1991)CrossRefGoogle Scholar
3. d'Heurle, F., Peterson, C.S., Baglin, J.E.E., Placa, S.J.La, Wong, C.Y., J.Appl.Phys. 55(12) 4208 (1984)Google Scholar
4. Lee, J.H., Rozgonyi, G.A., Knoesen, D., Adams, D., submitted to J.Appl.Phys.Google Scholar
5. Chen, L.J., Wu, I.W., Chu, J.J., Nieh, C.W., J.Appl.Phys. 63(8), 2778 (1988)Google Scholar
6. Holloway, K., Sinclair, R., J.Vac.Sci.Technol. A7(3), 1479 (1989)CrossRefGoogle Scholar
7. Murarka, S.P., Silicide for VLSI Application (Academic Press, N.Y.,1983), p. 90 Google Scholar