Hostname: page-component-7bb8b95d7b-dtkg6 Total loading time: 0 Render date: 2024-09-18T07:56:01.545Z Has data issue: false hasContentIssue false

Kinetic Roughening of Interfaces in Driven Systems

Published online by Cambridge University Press:  26 February 2011

Bruno Grossmann
Affiliation:
Centre for the Physics of Materials, and Department of Physics, McGill University, Rutherford Building, 3600 University Street, Montréal, Québec, Canada H3A 2T8
Hong Guo
Affiliation:
Centre for the Physics of Materials, and Department of Physics, McGill University, Rutherford Building, 3600 University Street, Montréal, Québec, Canada H3A 2T8
Martin Grant
Affiliation:
Centre for the Physics of Materials, and Department of Physics, McGill University, Rutherford Building, 3600 University Street, Montréal, Québec, Canada H3A 2T8
Get access

Extract

We study the dynamics of an interface driven far from equilibrium in three dimensions. The relationship of the phenomena to self-organized critical phenomena is discussed. Numerical results are obtained for three models which simulate the growth of an interface: the Kardar-Parisi-Zhang equation, a discrete version of that model, and a solid-on-solid model with asymmetric rates of evaporation and condensation. We show that the three models belong to the same dynamical universality class by estimating the dynamical scaling exponents and the scaling functions. We confirm the results by a careful study of the crossover effects. In particular, we propose a crossover scaling ansatz and verify it numerically. Furthermore, the discrete models exhibit a kinetic roughening transition. We study this phenomenon by monitoring the surface step energy which shows a drastic jump at a finite temperature for a given driving force. At the same temperature, a finite size scaling analysis on the bond energy fluctuation shows a diverging peak [1].

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Most of the results in this article are presented and discussed more extensively in Grossmann, B., Guo, H., and Grant, M., to appear in Phys. Rev. A.Google Scholar
[2] For a recent review, see Beijeren, H. van and Nolden, I., in Topics in Current Physics, Vol.43, edited by Schommers, W., Blackenhagen, P. von, (Springer, Berlin, 1987).Google Scholar
[3] Weeks, J. D., in Ordering in Strongly Fluctuating Condensed Matter Systems, edited by Riste, T. (Plenum, New York, 1980); J. D. Weeks and G. H. Gilmer, Adv. Chem. Phys. 40, 157 (1979).Google Scholar
[4] Kardar, M., Parisi, G. and Zhang, Y. C., Phys. Rev. Lett. 56, 889 (1986). See also, E. Medina, T. Hwa, M. Kardar, and Y. C. Zhang, Phys. Rev. A 39, 3053 (1989).Google Scholar
[5] Bak, P., Tang, C., and Wiesenfeld, K., Phys. Rev. Lett. 59, 381 (1987); P. Bak and C. Tang, Phys. Rev. A 38, 364 (1988); C. Tang and P. Bak, Phys. Rev. A 60, 2347 (1988); C. Tang and P. Bak, J. Stat. Phys. 51, 797 (1988).Google Scholar
[6] Gunton, J. D. and Droz, M., Introduction to the Theory of Metastable and Unstable States, Vol. 183 of Lecture Notes in Physics (Springer, Berlin, 1983).CrossRefGoogle Scholar
[7] see [,1, 8, 13] and references thereinGoogle Scholar
[8] Guo, H., Grossmann, B., and Grant, M., Phys. Rev. Lett. 64, 1262 (1990).Google Scholar
[9] Fox, R., preprint submitted to Phys. Rev. Lett.Google Scholar
[10] Forster, D., Nelson, D. R., and Stephen, M. J., Phys. Rev. A 16, 732 (1977).Google Scholar
[11] If β ≡ X/z, with X + z = 2, the conjectures for dimension d are, β = 1/3, due to Kardar, Parisi, and Zhang ; β = 1/(2d – 1), due to D. E. Wolf and J. Kertesz ; and β = 1/(d + 1), due to J. M. Kim and J. M. Kosterlitz [7].Google Scholar
[12] Chakrabarti, A. and Toral, R., Phys. Rev. B 40, 11419 (1989).CrossRefGoogle Scholar
[13] Guo, H., Grossmann, B., and Grant, M., Phys. Rev. A 41, 7082 (1990).CrossRefGoogle Scholar
[14] Molecular Beam Epitaxy and Heterostructures, edited by Chang, L. L. and Ploog, K. (Martinus Nijhoff, Dordrecht, 1985); A. W. Vere, Crystal Growth (Plenum, New York, 1987).Google Scholar
[15] Thin Film Processes, edited by Vossen, J. L. and Kern, W. (Academic, New York, 1978); A. Mazor, D. J. Srolovitz, P. S. Hagan, and B. G. Bukiet, Phys. Rev. Lett. 60, 424 (1988).Google Scholar
[16] Dougherty, A. and Gollub, J. P., Phys. Rev. A 38, 3043 (1988); J. P. Franck and J. Jung, Physica D, 23, 259 (1986); J. Maurer, P. Bouissou, B. Perrin and P. Tabeling, Europhys. Lett. 8, 67 (1989); J. H. Bilgram, M. Firmann, and E. Hairlimann, J. Crys. Growth 96, 175 (1989); F. Gallet, S. Balibar, and E. Rolley, J. Phys. (Paris) 48, 369 (1987), and references therein.CrossRefGoogle Scholar
[17] Swendsen, R. H., Phys. Rev. B 17, 3710 (1978). R. H. Swendsen, Phys. Rev. B 15, 5421 (1977).Google Scholar
[18] Leamy, H. J. and Gilmer, G. H., J. Crys. Growth 24/25, 499 (1974).Google Scholar