Hostname: page-component-7c8c6479df-24hb2 Total loading time: 0 Render date: 2024-03-28T10:00:31.612Z Has data issue: false hasContentIssue false

A Kinetic Model for Metalorganic Chemical Vapor Deposition of GaAs from Trimethylgallium and Arsine

Published online by Cambridge University Press:  25 February 2011

Triantafillos J. Mountziaris
Affiliation:
Department of Chemical Engineering and Materials Science University of Minnesota, Minneapolis, MN 55455
Klavs F. Jensen
Affiliation:
Department of Chemical Engineering and Materials Science University of Minnesota, Minneapolis, MN 55455
Get access

Abstract

A kinetic model for metalorganic chemical vapor deposition (MOCVD) of GaAs from trimethylgallium and arsine is presented. The proposed mechanism includes 15 gas-phase species, 17 gas-phase reactions, 9 surface species and 29 surface reactions. The surface reactions take into account different crystallographic orientations of the GaAs substrate. Sensitivity analysis and existing experimental observations have been used to develop the reduced mechanism from the large number of reactions that might in principle occur. Rate constants are estimated by using thermochemical methods and reported experimental data. The kinetic mechanism is combined with a two-dimensional transport model of a hot-wall tubular reactor used in experimental studies. Model predictions of gas-phase composition and GaAs growth rates show good agreement with published experimental studies. In addition, the model predicts reported trends in carbon incorporation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kuech, T.F., Mat. Sci. Rep., 2, 1 (1987).Google Scholar
2. Jensen, K.F., Chem. Eng. Sci., 42, 923 (1987).Google Scholar
3. Fotiadis, D.I., Kremer, A.M., McKenna, D.R. and Jensen, K.F., J. Crystal Growth, 85, 154 (1987).Google Scholar
4. Moffat, H.K., Kuech, T.F., Jensen, K.F. and Wang, P.J., J. Crystal Growth, 93, 594 (1988).Google Scholar
5. Tirtowidjodjo, M. and Pollard, R., J. Crystal Growth, 77, 200 (1986).Google Scholar
6. Tirtowidjodjo, M. and Pollard, R., J. Crystal Growth, 93, 108 (1988).Google Scholar
7. Coltrin, M.E. and Kee, R.J., preprint.Google Scholar
8. Jacko, M.G. and Price, S.J.W., Can. J. Chem., 41, 1560 (1963).Google Scholar
9. Larsen, C.A., Buchan, N.I. and Stringfellow, G.B., Appl. Phys. Lett., 52, 480 (1988).Google Scholar
10. DenBaars, S.P., Maa, B.Y., Dapkus, P.D., Danner, A.D. and Lee, H.C., J. Crystal Growth, 77, 188 (1986).Google Scholar
11. Dapkus, P. D., DenBaars, S. P., Chen, Q. and Maa, B.Y., in Mechanisms of Reactions of Metalorganic Compounds with Surface, edited by Cole-Hamilton, D. (NATO Adv. Study Inst., 1988), in press.Google Scholar
12. Tamaru, K., J. Phys. Chem., 59, 777 (1955).Google Scholar
13. Lückerath, R., Tommack, P., Herling, A., Koss, H.J., Balk, P., Jensen, K.F. and Richter, W., J. Crystal Growth, 93, 151 (1988).Google Scholar
14. Butler, J.E., Bottka, N., Sillmon, R.S. and Gaskill, D.K., J. Crystal Growth, 77, 163 (1986).Google Scholar
15. Tsang, W. and Hampson, R.F., J. Phys. Chem. Ref. Data, 15, No. 3, 1087 (1986).Google Scholar
16. Benson, S.W., Thermochemical Kinetics, 2nd ed. (Wiley, New York, 1976).Google Scholar
17. Mountziaris, T.J. and Jensen, K.F., in preparation.Google Scholar
18. Petzold, L.R., Report #SAND82-8637, Sandia National Laboratories, Livermore, CA, 1982.Google Scholar
19. Reep, D.H., PhD Thesis, Rensselaer Polytechnic Institute, 1982.Google Scholar
20. Reep, D.H. and Ghandhi, S. K., J. Electrochem. Soc., 130, 675 (1983).Google Scholar
21. Kuech, T.F. and Veuhoff, E., J. Crystal Growth, 68, 148 (1984).Google Scholar
22. Kuech, T.F., personal communication.Google Scholar