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Kinetic Characteristics of Si3N4 CVD

Published online by Cambridge University Press:  15 February 2011

W. Y. Lee ,
J. R. Strife  and
R. D. Veltri
W. Y. Lee
Affiliation:
United Technologies Research Center, East Hartford, CT 06108.
J. R. Strife
Affiliation:
United Technologies Research Center, East Hartford, CT 06108.
R. D. Veltri
Affiliation:
United Technologies Research Center, East Hartford, CT 06108.
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Abstract

The CVD of Si3N4 from SiF4 and NH3 gaseous precursors was studied using a hotwall reactor in the temperature range of 1340 to 1490°C. The effects of temperature, time, flow rate, and SiF4/NH3 molar ratio on deposition rate and axial and radial deposition profiles were identified. The decomposition characteristics of pure NH3 and SiF4 were studied utilizing mass spectroscopy and compared to thermodynamic predictions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 47
Copyright
Copyright © Materials Research Society 1992

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