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Is Transition Metal Incorporated ZnO an Intrinsic Ferromagnetic Semiconductor?

Published online by Cambridge University Press:  01 February 2011

Kanwal P Bhatti ,
Sujeet Chaudhary ,
Dinesh K Pandya  and
Subhash C Kashyap
Kanwal P Bhatti
Affiliation:
bhattipkanwal@rediffmail.com, Guru Nanak Dev University, Department of Applied Physics, Amritsar, 143005, India
Sujeet Chaudhary
Affiliation:
sujeetc@physics.iitd.ac.in, Indian Institute of Technology Delhi, Department of Physics, Hauz Khas, New Delhi, 110016, India
Dinesh K Pandya
Affiliation:
dkpandya@physics.iitd.ac.in, Indian Institute of Technology Delhi, Department of Physics, Hauz Khas, New Delhi, 110016, India
Subhash C Kashyap
Affiliation:
skashyap@physics.iitd.ac.in, Indian Institute of Technology Delhi, Department of Physics, Hauz Khas, New Delhi, 110016, India
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Abstract

Studies on Mn, Ni and Co doped ZnO systems have revealed that the RTFM present in these systems can be both intrinsic and extrinsic depending on the choice of TM ion incorporated, technique of preparation and post-synthesis processing. Choice of such a technique that ensures better homogeneity and incorporation of TM ions in the ZnO host, leads to the occurrence of intrinsic, stable and robust RTFM. The air ambient processing eliminates the chances of any metallic cluster inclusions, and instead such TM oxide phases are formed that are non-ferromagnetic. However, post synthesis processing like vacuum annealing of ZnO:Co samples under some situations can give rise to occurrence of extrinsic RTFM. But, this can be overcome by certain additional processing step. ZnO:Co samples with intrinsic RTFM, stable upto 900°C annealing with Curie temperatures in excess of 450°C have successfully been prepared.

Keywords

ferromagneticoxidemagnetic properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I07-05
Copyright
Copyright © Materials Research Society 2008

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References

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