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Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current
Published online by Cambridge University Press: 01 February 2011
Abstract
We demonstrate the realization of compatibility of extremely low gate leakage current and low source resistance with Si ion-implanted (I/I) GaN/AlGaN/GaN surface-stabilized high-electron mobility transistor (HEMT) without any recess etching process. The source/drain regions were formed using Si ion implantation into undoped GaN/AlGaN/GaN on sapphire substrate. Using ion implantation into source/drain (S/D) regions with energy of 80 keV, the performances were significantly improved. On-resistance (Ron) reduced from 105 to 9.2 Ω·mm. Saturation drain current (Idss) and maximum transconductance (gmMAX) increased from 49 to 527 mA/mm and from 13 to 84 mS/mm (Vg=+1V).
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- Copyright © Materials Research Society 2007
References
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