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Ionic Liquid Electrochemical Synthesis of Earth Abundant Monophase Chalcostibite p-CuSbS2 Photo-absorber Thin films for Heterojunction Solar Cells With n-ZnO

Published online by Cambridge University Press:  16 March 2015

Nishanth R. Janardhana ,
Navjot Kaur Sidhu ,
Ratheesh R. Thankalekshmi  and
Alok C. Rastogi
Nishanth R. Janardhana
Affiliation:
Electrical and Computer Engineering Department, Binghamton University, State University of New York, Binghamton, NY 13902, U.S.A Center for Autonomous Solar Power (CASP), Binghamton University, State University of New York, Binghamton, NY 13902, U.S.A
Navjot Kaur Sidhu
Affiliation:
Electrical and Computer Engineering Department, Binghamton University, State University of New York, Binghamton, NY 13902, U.S.A Center for Autonomous Solar Power (CASP), Binghamton University, State University of New York, Binghamton, NY 13902, U.S.A
Ratheesh R. Thankalekshmi
Affiliation:
Center for Autonomous Solar Power (CASP), Binghamton University, State University of New York, Binghamton, NY 13902, U.S.A
Alok C. Rastogi
Affiliation:
Electrical and Computer Engineering Department, Binghamton University, State University of New York, Binghamton, NY 13902, U.S.A Center for Autonomous Solar Power (CASP), Binghamton University, State University of New York, Binghamton, NY 13902, U.S.A
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Abstract

Single step synthesis of monophase CuSbS2 thin films by electro-deposition in ionic liquid electrolyte based on choline chloride and urea (ChCl:U) eutectic mixture is described. The formation of binary CuxS and SbxSy film phases using CuCl2 and SbCl3 precursors along with Na2S2O3 as sulfur source in ChCl:U are established as -0.59 V and -0.36 V vs. Pt, respectively by cyclic voltammetry and used to optimize CuSbS2 thin films growth potential and precursor composition. CuSbS2 films deposited at -0.65 V vs Pt with 1:1 Cu to Sb precursor ratio at 80⁰C are highly crystalline in chalcostibite orthorhombic structure. Deviant Cu/Sb ratio at 1:0.71 and 1:1.4 reveal inclusion of Cu3SbS3 and Sb2S3, respectively. Direct 1.65 eV band gap for single phase CuSbS2 film and with inclusive secondary phases at 1.73±0.1 eV and 2.13 eV is observed. As-deposited CuSbS2 films are p-type and n-p hetero-junction device in the n-ZnO/p-CuSbS2/Ag structure shows rectifying I-V curves and dependence on the CuSbS2 film growth conditions.

Keywords

photovoltaicelectrodepositionthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1738: Symposium V – Sustainable Solar-Energy Conversion Using Earth-Abundant Materials , 2015 , mrsf14-1738-v05-56
Copyright
Copyright © Materials Research Society 2015 

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References

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