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Ion-Beam Synthesized Semiconducting β-FeSi2 Controlled By Annealing Procedures And Phase-Transitions

Published online by Cambridge University Press:  10 February 2011

Y. Maeda ,
T. Fujita ,
T. Akita ,
K. Umezawa  and
K. Miyake
Y. Maeda
Affiliation:
Department of Materials Sciences, Osaka Prefecture University, Sakai, Osaka 599 Japan, ymaeda@ms.cias.osakafu-u.ac.jp
T. Fujita
Affiliation:
Department of Materials Sciences, Osaka Prefecture University, Sakai, Osaka 599 Japan, ymaeda@ms.cias.osakafu-u.ac.jp
T. Akita
Affiliation:
Department of Materials Sciences, Osaka Prefecture University, Sakai, Osaka 599 Japan, ymaeda@ms.cias.osakafu-u.ac.jp
K. Umezawa
Affiliation:
Department of Materials Sciences, Osaka Prefecture University, Sakai, Osaka 599 Japan, ymaeda@ms.cias.osakafu-u.ac.jp
K. Miyake
Affiliation:
Power & Industrial Systems R&D Division, Hitachi, Ltd. Hitachi, Ibaraki, 316 Japankmiyake@erl.hitachi.co.jp
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Abstract

The ion beam synthesis (IBS) of β-FeSi2 was examined by Rutherford backscattering spectroscopy (RBS) and x-ray diffractometry (XRD), and the structural characterization was carried out by Raman spectroscopy and scanning electron microscopy (SEM). We found that the IBS of β- FeSi2 is controlled by two different processes depending on the annealing temperature (Ta) and Fe surface concentration (Cs); (I) precipitation of β-FeSi2 on the surface in Cs˜30 at% and Ta⩾700° C and (II) phase transition from γ -FeSi2 to β-FeSi2 in Cs<∼20 at%and Ta⩾600°C. The precipitation process(1) created large sized (-10 μm) polycrystalline grains of β-FeSi2. The good crystalline β-FeSi2 obtained above 800°C showed a clear reflectance maximum at 0.88 eV due to the optical transition at the direct band-gap of 0.84 eV observed in the characteristic plot ((ahv)2 vs. hv) of the optical absorption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 329
Copyright
Copyright © Materials Research Society 1998

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