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Ion-assisted Sputter Deposition of Microcrystalline Silicon Films with Pulsed-DC Plasma Excitation

Published online by Cambridge University Press:  17 March 2011

P. Reinig ,
F. Fenske ,
B. Selle  and
W. Fuhs
P. Reinig
Affiliation:
Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekuléstr.5, D-12489 Berlin, Germany
F. Fenske
Affiliation:
Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekuléstr.5, D-12489 Berlin, Germany
B. Selle
Affiliation:
Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekuléstr.5, D-12489 Berlin, Germany
W. Fuhs
Affiliation:
Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekuléstr.5, D-12489 Berlin, Germany
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Abstract

We have applied a novel Ion-Assisted Sputter Deposition (IASD) method to deposit microcrystalline silicon (µc-Si) thin films with high deposition rates. An unbalanced magnetron sputter source together with an asymmetrical bipolar pulsed-DC plasma excitation operating in the frequency range 50-250 kHz was used for realizing high ion fluxes to the growing film. µc-Si films of high crystallinity are obtained at T > 400 °C with growth rates of up to 90 nm/min. The crystallinity of the films is characterized by the thickness-independent ratio of the optical thickness n·d determined by FTIR measurements and the atomic area density N·d as given by RBS analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A5.7
Copyright
Copyright © Materials Research Society 2001

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References

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