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Ion Implantation of KnbO3 and LiNbO3 at Elevated Temperatures
Published online by Cambridge University Press: 25 February 2011
Abstract
Ion implantation, annealing and channeling of single crystalline samples of KnbO3 and LiNbO3 have been studied. Raising the substrate temperature above 600 K, greatly increases the tolerance of the crystals for high-dose implantation. In LiNbO3 dynamic recrystallization has been observed for the first time.
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- Copyright © Materials Research Society 1989
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