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Ion Implantation and Annealing of Oxides

Published online by Cambridge University Press:  28 February 2011

C. W. White ,
L. A. Boatner ,
P. S. Sklad ,
C. J. Mchargue ,
S. J. Pennycook ,
M. J. Aziz ,
G. C. Farlow  and
J. Rankin
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
L. A. Boatner
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
P. S. Sklad
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
C. J. Mchargue
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
S. J. Pennycook
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
M. J. Aziz
Affiliation:
Harvard University, Cambridge, MA 02138
G. C. Farlow
Affiliation:
Wright State University, Dayton, OH 45435
J. Rankin
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Ion implantation damage and annealing results are presented for a number of crystalline oxides. In A12 O3, the amorphous phase produced by ion bombardment of the pure material first crystallizes in the (crystalline) γ phase. This is followed by the transformation of γ-Al2 O3 to α-A12O3 at a well defined interface. The activation energy for the growth of α alumina from γ is 3.6 eV/atom. In CaTiO3, the implantation-induced amorphous phase transforms to the crystalline phase by solid-phase epitaxy (SPE). ZnO is observed to remain crystalline even after high implantation doses at liquid nitrogen temperatures. The near surface of KTaO3 is transformed to a polycrystalline state after implantation at room temperature or liquid nitrogen temperature.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 357
Copyright
Copyright © Materials Research Society 1987

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References

1. McHargue, C.J., Nucl. Instrum. Methods (in press).Google Scholar
2. McHargue, C.J., White, C.W., Appleton, B.R., Farlow, C.G., and Williams, J.M., Proc. Mat. Res. Soc. 27, 385 (1984).CrossRefGoogle Scholar
3. Burnett, P.J. and Page, T.F., J. Mater. Sci. 19, 845 (1984).CrossRefGoogle Scholar
4. Naramoto, H., White, C.W., Williams, J.M., McHargue, C.J., Holland, O.W., Abraham, M.M., and Appleton, B.R., J. Appl. Phys. 54, 683 (1983).CrossRefGoogle Scholar
5. White, C.W., Farlow, G.C., McHargue, C.J., Sklad, P.S., Angelini, M.P., and Appleton, B.R., Nucl. Instrum. Methods B7/8, 473 (1985).CrossRefGoogle Scholar
6. White, C.W., Sklad, P.S., Boatner, L.A., Farlow, G.C., McHargue, C.J., Sales, B.C., and Aziz, M.J., Mat. Res. Soc. Proc. 60, 337 (1986).CrossRefGoogle Scholar
7. Naguib, H.M. and Kelly, R., Rad. Eff. 25, 1 (1985).Google Scholar