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Ion Beam Surface Modification for Achieving Rectification in Gold-Aluminum Nitride-Silicon Junctions

Published online by Cambridge University Press:  22 February 2011

T. Stacy
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
B. Y. Liaw
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
A. H. Khan
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
G. Zhao
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
E. M. Charlson
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
E. J. Charlson
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
J. M. Meese
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
M. Prelas
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
J. L. Wragg
Affiliation:
Physics Department, University of Missouri, Columbia, MO 65211
J. E. Chamberlain
Affiliation:
Physics Department, University of Missouri, Columbia, MO 65211
H. W. White
Affiliation:
Physics Department, University of Missouri, Columbia, MO 65211
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Abstract

Low energy ion bombardment has been utilized to fabricate rectifying contacts on aluminum nitride grown on single crystal silicon substrates. Bombardment of aluminum nitride with methane was followed by sputter deposition of gold contacts. To our knowledge, this is the first report of rectifying contact formation on aluminum nitride. Scanning electron micrographs show that the initially ordered aluminum nitride surface is significantly altered with low energy methane ion beam exposure. Electrical measurements made on samples which had been partially masked during implantation indicate that rectification is a result of the ion bombardment.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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