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Ion Beam Deposition of Epitaxial Silicon Films
Published online by Cambridge University Press: 10 February 2011
Abstract
Silicon films of thicknesses (100 – 800 nm) are deposited on Si[111] substrate at 490°C using Si+ ions of energies (20 – 70 eV) from Silane plasma. The structure of the films depends on the energy of Si+ ions and the film grows epitaxially for ion energy <20 eV. Si films are analyzed by X-ray diffraction technique.
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- Copyright © Materials Research Society 1998