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Investigation of Structural Defects in 4H SiC Wafers

Published online by Cambridge University Press:  21 February 2011

M. Tuominen ,
R. Yakimova ,
R. C. Glass ,
T. Tuomi  and
E. Janzén
M. Tuominen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, Sweden Outokumpu Semitronic AB, Bromma, Sweden
R. Yakimova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, Sweden
R. C. Glass
Affiliation:
Department of Physics and Measurement Technology, Linköping University, Sweden
T. Tuomi
Affiliation:
Optoelectronics Laboratory, Helsinki University of Technology, Finland
E. Janzén
Affiliation:
Department of Physics and Measurement Technology, Linköping University, Sweden
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Abstract

For high-power device applications SiC has better physical and electronic properties than the traditional semiconductor materials Si and GaAs. In this work, structural defects of 4H SiC wafers have been studied and partly compared with results from a previous study of 6H material. Optical microscopy, scanning electron microscopy, high-resolution X-ray diffraction and synchrotron X-ray topography were used for structural studies of 4H SiC.Optical micrographs show micropipes and larger specific defects - tubes and cracks. X-ray rocking curve peaks are broad and split revealing the mosaicity of the material. Synchrotron X-ray topographs show areas having a large number of defects, images of cracks and micropipes, and misorientated regions close to the micropipes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 729
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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