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Investigation of Potential Diffusion Barriers Between YBa2Cu3O7-x and Silicon

Published online by Cambridge University Press:  28 February 2011

A. Lubig ,
Ch. Buchal ,
W. Zander  and
B. Stritzker
A. Lubig
Affiliation:
Institut für Schicht- und Ionentechnik, KFA Jülich, P. O. Box 1913, D–5170 Jülich, Fed. Rep. of Germany
Ch. Buchal
Affiliation:
Institut für Schicht- und Ionentechnik, KFA Jülich, P. O. Box 1913, D–5170 Jülich, Fed. Rep. of Germany
W. Zander
Affiliation:
Institut für Schicht- und Ionentechnik, KFA Jülich, P. O. Box 1913, D–5170 Jülich, Fed. Rep. of Germany
B. Stritzker
Affiliation:
Institut für Schicht- und Ionentechnik, KFA Jülich, P. O. Box 1913, D–5170 Jülich, Fed. Rep. of Germany
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Abstract

Thin films of ZrO2, BaF2, and noble metals on TiN have been examined by RBS as potential diffusion barriers between Si(100) substrates and high-temperature superconductors. As best result so far, a buffer layer of 260 nm ZrO2 enabled the growth of a 230 nm film of YBa2Cu3O7-x, which had been deposited by laser ablation. The relatively low zero resistance temperature of about 60 K may result from some interdiffusion between YBaCuO components and the ZrO2 layer or from holes in the film. A 520 nm BaF2 layer was able to prevent Si outdiffusion towards the surface, when exposed to an oxidizing ambient at typical YBa2Cu3O7-x deposition temperatures between 750 and 800°C. A strong reaction between YBaCuO components and BaF2, however, resulted in non-superconducting films. At high temperatures in oxidizing ambient the noble metal/TiN/Si samples suffered severely from oxidation and surface roughening.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 1149
Copyright
Copyright © Materials Research Society 1990

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References

1 Mogro-Campero, A., Hunt, B. D., Turner, L. G., Burrel, M. C., Balz, W. E., Appl. Phys. Lett. 52, 584 (1988)Google Scholar
2 Lubig, A., Buchal, Ch., Fröhlingsdorf, J., Zander, W., Stritzker, B., Nucl. Inst. Meth. Phys. Res. B, in pressGoogle Scholar
3 Mogro-Campero, A., Turner, L. G., Appl. Phys. Lett. 52., 1185 (1988)Google Scholar
4 Venkatesan, T., Chase, E. W., Wu, X. D., Inam, A., Chang, C. C., Shokoohi, F. K., Appl. Phys. Lett. 53, 243 (1988)Google Scholar
5 Myoren, H., Nishiyama, Y., Miyamoto, N., Fukumoto, H., Nasu, H., Osaka, Y., 2nd Workshop on High-Temperature Superconducting Electron Devices, June 7–9, 1989, Shikabe, Japan, 209 Google Scholar
6 Fröhlingsdorf, J., Zander, W., Stritzker, B., Solid State Commun. 11, 965 (1988)Google Scholar
7 Chan, Siu-Wai, Chase, E. W., Wilkens, B. J., Hart, D. L., Appl. Phys. Lett. 54, 2032 (1989)Google Scholar