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Investigation of mechanical properties of mesoporous methyl-substituted SiO2 thin films (Methylsilesquioxane materials).

Published online by Cambridge University Press:  01 February 2011

M. Verdier ,
M. Montagnat ,
S. Maîtrejean  and
G. Passemard
M. Verdier
Affiliation:
LTPCM CNRS Domaine Universitaire, BP75 38402 St Martin d'Hères– France
M. Montagnat
Affiliation:
LTPCM CNRS Domaine Universitaire, BP75 38402 St Martin d'Hères– France
S. Maîtrejean
Affiliation:
CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex
G. Passemard
Affiliation:
STMicroelectronics, 850 rue J. Monnet 38926 Crolles Cedex France
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Abstract

In ULSI circuit, interlayer thin film with low dielectric constant shall be used in order to reduce the interconnection RC delay. One promising material is methylsilesquioxane (MSQ) deposited by spin coating with controlled porosity. High porosity combined with matrix weakness result in low mechanical properties that could be detrimental to circuit reliability.

The aim of this study is to investigate the deformation behavior of mesoporous MSQ thin films by nanoindentation and by AFM analysis of residual indents. At first, proper measurement conditions were explored by modulating the film thickness from 100 nm up to 600nm for a fixed film density: the very low elastic modulus of the material on stiff substrate requires great care in the raw data analysis. Next, the density of these mesoporous films has been adjusted and the response to indentation is compared with dense bulk fused silica. AFM investigations lead to the sequence of fracture processes and to the sensitivity to hydrostatic pressure on the deformation of these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U5.26
Copyright
Copyright © Materials Research Society 2004

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References

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