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Investigation of Electric Characteristics of Nanoscale Composite A1B5C6 Semiconductors: Experiment and Numerical Simulation

Published online by Cambridge University Press:  01 February 2011

H. Khlyap ,
V. Bilozertseva ,
L. Panchenko ,
P. Shkumbatiuk  and
M. Andrukhiv
V. Bilozertseva
Affiliation:
University of Technology, E.-Schroedinger str. 56, D-67663 Kaiserslautern, Germany, and 8tate Pedagogical University, 24 Franko str., 82100 Drohobych, Ukraine
L. Panchenko
Affiliation:
National Politechnical University “KPI”, 21 Frunze str., 61102 Kharkov, Ukraine
P. Shkumbatiuk
Affiliation:
Sumy State University, 2 Rimskii-Korsakov str., Sumy, Ukraine
M. Andrukhiv
Affiliation:
State Pedagogical University, 24 Franko str., 82100 Drohobych, Ukraine
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Abstract

Composite semiconductors belonging to the group A1B5C6(Ag3SbS3, Tl3SbS3, Ag3AsS3 and others) are seemed to be among the most promising materials for manufacturing detectors of ionizing radiations (γ-Ray Detectors Based on Composite A1B5C6 Semiconductors, H. Khlyap et al., MRS Proceed. 792 (2004, R3.4.1). Electric properties of these wide-gap semiconductors are almost not studied. The paper reports first experimental results on electric field-induced effects observed in these nanoscaled semiconductor structures under the room temperature. Bulk materials as well as thin films were studied. The experimental data were analyzed according to the semiclassical theory of tunneling in solids.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J13.8
Copyright
Copyright © Materials Research Society 2005

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References

[1]. Khlyap, H., Belozerseva, V.., Panchenko, L., Andrukhiv, M., Proceedings of SPIE, V. 4412, 211 (2000).:Google Scholar
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