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Investigation of Defect Concentration Distributions in Ion-Implanted and Annealed GaAs

Published online by Cambridge University Press:  15 February 2011

K.L. Wang ,
G.P. Li ,
P.M. Asbeck  and
C.G. Kirkpatrick
K.L. Wang
Affiliation:
University of California, Los Angeles, CA 90024
G.P. Li
Affiliation:
University of California, Los Angeles, CA 90024
P.M. Asbeck
Affiliation:
Rockwell International, Thousand Oaks, CA 91360
C.G. Kirkpatrick
Affiliation:
Rockwell International, Thousand Oaks, CA 91360
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Abstract

Uncapped and Si3N4-capped annealing of GaAs grown with the horizontal Bridgman technique was investigated with deep-level transient spectroscopy. Electron trap concentration distributions were measured with a reduced noise DLTS system to ensure reliable data. Ion implantation using Se ions both prior to capping and through a Si3N4 cap was carried out. The evolution of defect energy levels and the changes in concentration distributions with anneal temperature were studied. It is concluded that the defects residing in the probed space-charge region can be annealed out with a Si3N4 cap at a temperature higher than 750 C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 487
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. For example, see Eden, R.C., Welch, B.M., Zucca, R., and Long., S.I. IEEE ED–26, 299 (1979).Google Scholar
2. Higgins, J.A., Kuvas, R.L., Eisen, F.H. and Ch'en, D.R.. IEEE ED–25, 587 (1978).Google Scholar
3. Zuleeg, R., Notthoff, J.K. and Lehovec, K., IEEE ED–25, 628 (1978).Google Scholar
4. Asbeck, P.M., Tandon, J., Welch, B.M., Evans, C.A. Jr., and Deline, V.R., IEEE Electron Device Letters, vol EDL–l, 35 (1980).CrossRefGoogle Scholar
5. Mircea, A. and Bois, D., Inst. Phys. Conf., Serv. 46, 82 (1979) and references therein;Google Scholar
Pons, D., Mircea, A., Mitonneau, A. and Martin, G.M., Inst. Phys. Conf., Serv., 352 (1979);Google Scholar
Mircea, A., Mitonneau, A., Hallan, L. and Briere, A., Appl. Phys. 11, 153 (1976);CrossRefGoogle Scholar
Mircea, A and Mitonneau, A., Appl. Phys. 8, 15 (1975).CrossRefGoogle Scholar
6. Patin, D.L., Chen, J.W., Milnes, A.G. and Vassamillet, L.F. J. Appl. Phys. 50, 6845 (1979).CrossRefGoogle Scholar
7. Henry, C.H., J. of Electronic Materials 4, 1037 (1975);CrossRefGoogle Scholar
Lang, D.V. and Logan, R.A., J. of Electronic Materials, 1053 (1975);CrossRefGoogle Scholar
Lang, D.V., Inst. Conf. Ser. No. 31, p. 70 (1977).Google Scholar
8. Lang, D.V., J. Appl. Phys. 45, 3014 (1974);CrossRefGoogle Scholar
Miller, G.L., Lang, D.V. and Kimerling, L.C. in Ann. Rev. Mater. Sci. (Annual Rev. Inc., Palo Alto, CA 1977) vol. 7.Google Scholar
9. Wang, K.L., Appl. Phys. Letters, 29, 700 (1976), andCrossRefGoogle Scholar
LeFeure, H. and Schultz, M., Appl. Phys. 12, 45 (1977).CrossRefGoogle Scholar
10. Lang, D.V. and Kimerling, L.C., “A new technique for defect spectroscopy in semiconductors.” Application to one MeV electron irradiated n-GaAs”, in Lattice defect in semiconductors (Institute of Physics, London, 1974) pp. 581–588.Google Scholar