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Intrinsic Gettering in Oxygen-Free Silicon

Published online by Cambridge University Press:  21 February 2011

K. Nauka ,
J. Lagowski  and
H. C. Gatos
K. Nauka
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
J. Lagowski
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
H. C. Gatos
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We found that the intrinsic gettering can be effectively realized in oxygen-lean Czochralski silicon grown in a magnetic field as well as in oxygen-free float-zone silicon. The intrinsic gettering has been observed thus far only in oxygen-rich Czochralski silicon and it has been believed to be intimately related to oxygen. We present experimental characteristics of the new intrinsic gettering process, and we propose a model involving outdiffusion and precipitation of silicon interstitials rather than oxygen which is involved in the standard intrinsic gettering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 175
Copyright
Copyright © Materials Research Society 1985

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References

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