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The Interpretation of the Constant Photocurrent Method in Terms of Deep Defect Density of States in A-SI.H

Published online by Cambridge University Press:  16 February 2011

Frank Siebke  and
Helmut Stiebig
Frank Siebke
Affiliation:
Research Centre Jülich, Institute of Thin Film and Ion Technology (ISI-PV), P.O. Box 1913, D-52425 Jülich, Germany
Helmut Stiebig
Affiliation:
Research Centre Jülich, Institute of Thin Film and Ion Technology (ISI-PV), P.O. Box 1913, D-52425 Jülich, Germany
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Abstract

The constant photocurrent Method (CPM) is often used to measure the sub-bandgap absorption for the determination of the defect density. However, the absolute value of the derived defect density depends on the method of data analysis and the calibration factor. Normally the calibration factor is obtained from electron spin resonance (ESR) but the defect pool model gives rise to doubt whether ESR detects the same defects as CPm. Therefore, we propose combined total-yield photoelectron spectroscopy (TYPES) and CPM Measurements on n-type a-Si:H to determine the calibration factor. Furthermore, we calculate CPM spectra by extending an approach to simulate photoconductivity, taking into account the full set of optical transitions, and compare the results with standard evaluation Methods.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 371
Copyright
Copyright © Materials Research Society 1994

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References

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