Hostname: page-component-84b7d79bbc-lrf7s Total loading time: 0 Render date: 2024-07-25T20:52:08.576Z Has data issue: false hasContentIssue false
  • English
  • Français

Internal Stress and Optical Degradation in a-Si:H Deposited on Glass Substrates

Published online by Cambridge University Press:  10 February 2011

Jun-ichi Nakata ,
Tadayuki Miyako ,
Shozo Imao  and
Atsutoshi Doi
Jun-ichi Nakata
Affiliation:
Department of Electrical Engineering, Kinki University, Higashiosaka, Osaka 577-8502, JAPAN
Tadayuki Miyako
Affiliation:
Department of Electrical Engineering, Kinki University, Higashiosaka, Osaka 577-8502, JAPAN
Shozo Imao
Affiliation:
Department of Electrical Engineering, Kinki University, Higashiosaka, Osaka 577-8502, JAPAN
Atsutoshi Doi
Affiliation:
Department of Electrical Engineering, Kinki University, Higashiosaka, Osaka 577-8502, JAPAN
Get access

Abstract

Internal stress in a-Si:H films prepared by plasma chemical vapor deposition was studied in connection with optical degradation or Staebler-Wronski effect (SWE). It was found that the stress increased with increasing discharge power density (0.03 ∼ 1.5 W/cm2) of silane, accompanied by increase in the introduction rate of SWE. These results imply that highly decomposed radical species due to high discharge power density dominate the surface reaction. Consequently, larger stress and larger introduction rate of SWE are brought about in the films. The stress also slightly increased at lower power density (< 0.03 W/cm2), suggesting that neutral silane molecules take part in the reaction at these power density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 487
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
2 Stutzmann, M., Jackson, W. B. and Tsai, C. C., Phys. Rev. B 32, 23 (1985).Google Scholar
3 Smith, Z. E. and Wagner, S., Phys. Rev. Lett. 59, 688 (1987).Google Scholar
4 Winer, K., Phys. Rev. B 41, 12150 (1990).Google Scholar
5 Redfield, D. and Bube, R. H., Photoinduced Defects in Semiconductors (Cambridge Univ. Press, 1996) chap. 5.Google Scholar
6 Masson, D. P, Ouhal, A. and Yelon, A., J. Non-Cryst. Solids 190, 151 (1995).Google Scholar
7 Shimizu, K., Shiba, T., Tabuchi, T. and Okamoto, H., Jpn. J. Appl. Phys. 36, 29 (1997).Google Scholar
8 Matsuda, A. and Tanaka, K., Thin Solid Films 12, 171 (1982).Google Scholar
9 Lin, G. H., Doyle, J. R., He, M. and Gallagher, A., J. AppI. Phys. 64, 188 (1988).Google Scholar
10 Maeda, K., Kuroe, A. and Umezu, I.. Phys. Rev. B 51, 10635 (1995).Google Scholar
11 Robertson, R. and Gallagher, A., J. Chem. Phys. 85, 3623 (1986).Google Scholar