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Interface Stability During Solid Phase Epitaxy Of Strained GexS1-x Films on Si (100)

Published online by Cambridge University Press:  15 February 2011

Xiaobiao Zeng
Affiliation:
Department Of Materials Science And Engineering, Cornell University, Ithaca, Ny 14853
Tan-Chen Lee
Affiliation:
Department Of Materials Science And Engineering, Cornell University, Ithaca, Ny 14853
John Silcox
Affiliation:
Department Of Materials Science And Engineering, Cornell University, Ithaca, Ny 14853
Michael O. Thompson
Affiliation:
Department Of Materials Science And Engineering, Cornell University, Ithaca, Ny 14853
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Abstract

Strained solid phase epitaxial (SPE) regrowth of amorphous GexSi1-x on Si (100) substrates was studied using time-resolved reflectivity (TRR). Films of CVD-grown Ge0.13Si0.87 on Si were amorphized by Si ion implantation, and subsequently regrown at temperatures between 550°C and 610°. Information on regrowth dynamics and interface roughness evolution was obtained by accurately modeling the complicated TRR data for GexSi1-x regrowth using a Moving, statistically roughening interface. The SPE regrowth rate slowed as the interface crossed into the GexSi1-x layer and the originally planar interface roughened, as confirmed by transmission electron Microscopy. A Minimum in the regrowth velocity was observed after regrowing approximately 60 nm into the GexSi1-x layer; the SPE rate subsequently increased to a final, thickness-dependent velocity that was still below that for pure Si. Upon entering the GexSi1-x layer, the interface roughened quickly to a 15–20 nm amplitude, increasing only slightly more during the remainder of regrowth. The degree of roughening and velocity reduction was found to be dependent on the anneal temperature. In contrast, samples with low Ge concentrations (< 3 at.%) prepared by ion implantation exhibited minimal interface roughening and essentially identical SPE velocities as pure Si.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] King, C. A., Hoyt, J. L., Gronet, C. M., Gibbons, J. F., Scott, M. P., and Turner, J. A., IEEE Electron. Dev. Lett. 10, 52 (1989);Google Scholar
Iyer, S. S., Patton, G. L., Stork, J. M. C., Meyerson, B. S., and Harame, D. L., IEEE Trans. Electron. Devices ED-36, 2043 (1989).Google Scholar
[2] Wang, K. L., Park, J., Rhee, S. S., Karunasiri, R. P., and Chern, C. H., Superlattices and Microstructures 5 201 (1989);Google Scholar
Lin, T. L., Fathauer, R. W., and Grunthaner, P. J., App. Phys. Lett. 55, 795 (1989).Google Scholar
[3] See, for example, papers by Aziz, M. J. and Custer, J. S. in these proceedings.Google Scholar
[4] Paine, D. C., Evans, N. D., and Stoffel, N. G., J. Appl. Phys. 70, 4278 (1991).Google Scholar
[5] Hong, Q. Z., Zhu, J. G., Mayer, J. W., Xia, W., and Lau, S. S., J. Appl. Phys. 71, 1768 (1992).Google Scholar
[6] Paine, D. C., Howard, D. J., Stoffel, N. G., and Horton, J. A., J. Mater. Res. 5, 1023 (1990).Google Scholar
[7] Corni, F., Frabboni, S., Ottaviani, G., Queirolo, G., Bisero, D., Bresolin, C., Fabbri, R., and Servidori, M., J. Appl. Phys. 71, 2644 (1992).Google Scholar
[8] Olson, G. L., and Roth, J. A., Mater. Sci. Reports 3, 1 (1988).Google Scholar
[9] Lee, C., Haynes, T. E., and Jones, K. S., Appl. Phys. Lett. 62, 501 (1993).Google Scholar
[10] Yater, J. A., Ph.D. Thesis, Cornell University (1992).Google Scholar
[11] Born, M., and Wolf, E., Principles of Optics, 6th ed. (Pergamon Press, London, 1980) ch. 1.Google Scholar
[12] Jellison, G. E. Jr and Modine, F. A., Phys. Rev. B 27, 7466 (1983).Google Scholar