Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-25T17:05:26.129Z Has data issue: false hasContentIssue false
  • English
  • Français

Interface Resolution in Auger Depth Profiling

Published online by Cambridge University Press:  25 February 2011

D. Coulman  and
A. Turner
D. Coulman
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA 94304
A. Turner
Affiliation:
Physical Electronics Laboratories, Mountain View, CA 94043
Get access

Abstract

It has been well established that sputtering artifacts such as ion beam mixing, preferential sputtering and cone formation ultimately limit interface resolution in Auger and ESCA depth profiling. We have conducted a comparision of the effect of sample rotation, and of the angle of incidence of the ion beam using one and two ion guns on interface resolution. Our investigation has concentrated on the interface resolution and detection of impurities at the various interfaces of a typical semiconductor metallization scheme [Al 700 nm/ TiW 100 nm/ Si02 100 nm/Si]. We have determined that in going from a standard sputtering geometry of a 67 degree tilt from the surface normal to 80 degrees one obtains a factor of five improvement in interface resolution. Sample rotation, on the other hand, was found to improve interface resolution by a factor of two at 67 degrees and to result in minor improvement at 80 degrees. The effect of two ion guns was found to have a negligible effect on the samples studied.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 135
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. For reviews on depth profiling and interface resolution seeGoogle Scholar
a. Mathieu, H. J., in Thin Film and Depth Profile Analysis, edited by Oechsner, H. (Springer Verlag, 1984) pp. 39–62.CrossRefGoogle Scholar
b. Hofmann, S. and Sanz, J. M., in Thin Film and Depth Profile Analysis, edited by Oechsner, H. (Springer Verlag, 1984), pp 141–158.Google Scholar
c. Hofmann, S., in Practical Surface Analysis, edited by Briggs, D. and Seah, M. P. (John Wiley & Sons, New York) pp. 141–179.Google Scholar
2. Zalar, A., Thin Solid Films, 124 (1985) 223–230.Google Scholar
3. Seah, M.P. and Jones, M.E., Thin Solid Films, 115 (1984) 203–216.Google Scholar
4. Ingrey, S. and Cook, J.P.D., 1985 Fall Meeting of the Materials Research Society.Google Scholar