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Interface Phenomena in very thin Si-Ge Heterostructures

Published online by Cambridge University Press:  15 February 2011

J.-M. Baribeau ,
D.J. Lockwood ,
Z.-H. Lu  and
R.L. Headrickt
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, K1A OR6, CANADA.
D.J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, K1A OR6, CANADA.
Z.-H. Lu
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, K1A OR6, CANADA.
R.L. Headrickt
Affiliation:
Cornell High Energy Synchrotron Source and Department of Applied Engineering Physics, Cornell University, Ithaca NY 14853–8001.
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Abstract

Interfacial properties of thin Si/Ge heterostructures are discussed. It is shown that (SimGen) p superlattices with well defined periodicity can be synthesized on both (100) Si and Ge using low temperature (350 °C) Molecular beam epitaxy. Multilayer structures are however intermixed over one or two monolayers and exhibit a roughness with lateral scale > 100 nm and an amplitude of the order of two Monolayers. On Si the roughness is strongly correlated from interface to interface, possibly due to small surface mobility during growth. Segregation of Ge during growth has also been evidenced by x-ray photoelectron spectroscopy and may explain some of the interface Mixing. The strong composition dependence of Ge diffusion in Si1−xGex alloys causes anisotropie diffusion upon annealing whereby a large composition gradient can be preserved at the heterointerfaces due to the very slow diffusion rate of Ge atoms in pure Si. This effect is important in structures which alternate thin Ge and thick Si layers and is thus more prominent in superlattices grown on Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 77
Copyright
Copyright © Materials Research Society 1994

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References

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