Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-19T22:44:35.912Z Has data issue: false hasContentIssue false
  • English
  • Français

INTERFACE CHARACTERISATION AND INTERNAL ELECTRIC FIELD EVALUATION OF a-Si:H PIN SOLAR CELL BY VARIABLE ENERGY POSITRON ANNIHILATION SPECTROSCOPY

Published online by Cambridge University Press:  10 February 2011

X. Zou ,
Y. C. Chan ,
D. P. Webb ,
Y. W. Lam ,
F. Y. M. Chan ,
S. H. Lin ,
Y. F. Hu ,
C. D. Beling  and
S. Fung
X. Zou
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong
Y. C. Chan
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong
D. P. Webb
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong
Y. W. Lam
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong
F. Y. M. Chan
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong
S. H. Lin
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong
Y. F. Hu
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong
C. D. Beling
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong
S. Fung
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong
Get access

Abstract

By means of the slow positron beam Doppler-broadening technique, the depth profile of microvoids across a p-i-n double junction solar cell has been resolved. VEPFIT fitting results indicate an approximately uniform density of the defects throughout the solar cell, but with an enhanced concentration at all of the interfaces possibly due to network mismatch. In order to evaluate the internal electric field, Variable Energy Positron Annihilation Spectroscopy (VEPAS) measurements have been performed on a single junction pin solar cell at different biases. The internal electric field effect on positrons has also been examined in terms of the bias dependence of positron drift in a-Si:H single junction pin solar cell.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 643
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Beling, C. D., S. Fung, Weng, H. M., Reddy, C. V., Fan, S. W., Shan, Y. Y. and Ling, C. C., American Institute of Physics, Conference Proceedings Series 303, p. 462 (1992).Google Scholar
2 Schultz, Peter J. and Lynn, K. G., Reviews of Modern Physics, 60, p. 701 (1988).Google Scholar
3 Mills, A. P. Jr. and Wilson, R., Phys. Rev. A 26, p. 490 (1982).Google Scholar