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Interactions and Stability of Cu on CoSi2

Published online by Cambridge University Press:  25 February 2011

Y. -T. Shy ,
S. P. Murarka ,
A. R. Sitaram ,
P.-J. Ding  and
W. A. Lanford
Y. -T. Shy
Affiliation:
Materials Engineering Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
S. P. Murarka
Affiliation:
Materials Engineering Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
A. R. Sitaram
Affiliation:
Motorola Inc., Austin, TX 78721
P.-J. Ding
Affiliation:
Physics Department, State University of New York, Albany, NY 12222
W. A. Lanford
Affiliation:
Physics Department, State University of New York, Albany, NY 12222
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Abstract

Copper is being investigated for application as multi-level interconnection metal in silicon ultra-large-scale integration (ULSI). On the other hand, COSi2 is being tested for application as contacts in sub-half micron ULSI circuits. Copper will thus be used on COSi2 to bring the electrical connection to the outside world. In this investigation we have therefore studied the interactions of copper with CoSi2 employing sheet resistance measurements (four-point probe), Rutherford back scattering (RBS), and X-ray diffraction (XRD). In addition the stability of the Schottky diodes, n-Si/CoS2/Cu, has been investigated as a function of the heat treatment in the range of room temperature to 600° C in argon-3% hydrogen mixture gas ambient. Both the measurements of the analytical and electrical characteristics show that Cu on n-Si/CoSi2 is stable at least up to a 30 minutes anneal at 600°C in argon-3% hydrogen medium. These results will be presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 151
Copyright
Copyright © Materials Research Society 1992

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References

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