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Interaction of Periodically Arranged Point Defects in a Two Dimensional Photonic Crystal -The Photonic Analogue to a Doped Semiconductor

Published online by Cambridge University Press:  01 February 2011

S. Richter
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
S. L. Schweizer
Affiliation:
Universtät Paderborn, Warburgerstr. 100, D-33098, Paderborn
R. Hillebrand
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
C. Jamois
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
R. B. Wehrspohn
Affiliation:
Universtät Paderborn, Warburgerstr. 100, D-33098, Paderborn
M. Zacharias
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
U. Goesele
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
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Abstract

We present and characterize hexagonal point defects in a two dimensional photonic crystal based on macroporous silicon. These point defects are prepatterned periodically, forming a superstructure within the photonic crystal after electrochemical etching. Spatially resolved, optical investigations related to morphological properties, like defect concentration and pore radius, are compared to bandstructure calculations. The confined defect states are identified and their interaction is evaluated quantitatively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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